Date of Award


Document Type


Degree Name

Master of Science in Engineering (MSE)


Electrical Engineering

Committee Chair

Aleksandar Milenkovic

Committee Member

Aubrey Beal


Static random access memory--Reliability, Static random access memory--Effect of environment on


Static random-access memory (SRAM) is a high-speed, volatile memory that is ubiquitous in a wide range of computing platforms. Because of intrinsic process variations, an SRAM array’s power-up state presents a random yet distinctive, device-specific signature known as a Physical Unclonable Function (PUF). However, as SRAM dimensions continue to shrink, concerns arise about the PUF's resilience in extreme environments like outer space. Space has environmental conditions with high radiation levels and very low temperatures, so SRAM's reliability must be studied in these conditions. This research finds that ionizing radiation effects can dramatically impact the reliability of SRAM PUF. A technology node dependent study shows poor PUF-reliability for smaller nodes, and a temperature dependent study shows significant PUF-reliability degradation due to temperature variation. Encountering a combination of these factors weakens PUF reliability in space, so radiation-hardening techniques will be needed for preservation of PUF.



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