Date of Award

2019

Document Type

Thesis

Degree Name

Master of Science in Engineering (MSE)

Department

Chemical and Materials Engineering

Committee Chair

Yu Lei

Committee Member

Michael Banish

Committee Member

Anuradha Subramanian

Subject(s)

Thin films, Silver, Atomic layer deposition

Abstract

Thermal Atomic Layer Deposition (ALD) is a powerful method used to deposit highly uniform thin films. It has been repeatedly demonstrated in literature that ALD is capable of generating thin films of various metals and metal oxides (among other materials) upon a variety of substrates with extremely precise thickness control. The self-limiting nature of the ALD mechanism makes it an ideal candidate for use in the nanoscale. The objective of this work is to determine a method of generating continuous silver thin films of less than ten nanometers using our ALD system. To achieve this result, procedures of depositing silver thin films previously documented in literature were investigated and expanded upon. Characterization techniques such as quartz crystal microbalance (QCM), x-ray diffraction (XRD), and spectroscopic ellipsometry were used to describe key information about these processes, such as film growth rate, precursor saturation, and the ALD temperature window.

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