Date of Award
2023
Document Type
Thesis
Degree Name
Master of Science in Engineering (MSE)
Department
Electrical and Computer Engineering
Committee Chair
Aleksandar Milenkovic
Committee Member
Timothy Boykin
Subject(s)
Flash memories (Computers)--Effect of radiation on
Abstract
Commercial NAND flash memories are very attractive for space applications, characterized by their compact form factor, low weight, high bit density, and energy efficient performance. Nevertheless, the vulnerability of NAND flash memories to ionizing radiation-induced data corruption through threshold voltage shifts has been a significant concern. This thesis presents a comprehensive examination of total-ionizing-dose (TID) effects on commercial 3-D NAND flash memory through irradiation experiments conducted using a Co-60 source. One of the most intriguing findings of this study is the remarkable resilience displayed by a specific fraction of memory cells to the TID effects. To shed light on this phenomenon, a model which attributes the TID-resilience to pre-existing trap-states located within the tunnel oxide was developed. The results of this research not only enhance the understanding of TID effects on flash memory but also offer new insights into the potential for harnessing pre-existing trap-states to improve the radiation tolerance.
Recommended Citation
Kumar, Mondol Anik, "Total-ionizing-dose effects on commercial 3-D NAND flash memory chips" (2023). Theses. 619.
https://louis.uah.edu/uah-theses/619