Date of Award
2014
Document Type
Thesis
Degree Name
Master of Science (MS)
Department
Physics
Committee Chair
Seyed Sadeghi
Committee Member
Satilmis Budak
Committee Member
Don A. Gregory
Committee Member
A. M. Elsamadicy
Subject(s)
Thermoelectricity, Thermoelectric apparatus and appliances, Semiconductors
Abstract
Thermoelectric generators convert heat to electricity. A low thermal and a high electrical conductivity are characteristics of thermoelectric materials and devices. The efficiency of thermoelectric materials and devices is quantified by dimensionless figure of merit ZT=TS^2&sigma/&kappa where S is the Seebeck coefficient, &sigma is the electrical conductivity, T is the absolute temperature in Kelvin, and &kappa is the thermal conductivity. Multilayer thin films with 100 alternating layers of SiO2/SiO2+Ge, 50 alternating layers of Si/Si+Sb, and 40 alternating layers of Si/Si+Ge superlattice thin films have been prepared by using ion beam-assisted deposition (IBAD) and DC/RF Sputtering in order to study thermoelectric power generation. Raman Spectroscopy, Atomic Force Microscopy for surface morphology, and annealing techniques were applied. The thermoelectric and transport features have been characterized for SiO2/SiO2+Ge, Si/Si+Sb, Si/Si+Ge superlattice thin films.
Recommended Citation
Gulduren, Muhammed E., "Fabrication and characterization of thermoelectric nanolayer thin films modified by MeV Si ions" (2014). Theses. 97.
https://louis.uah.edu/uah-theses/97